Title:
【発明の名称】高抵抗性GaNバルク結晶の製造方法
Document Type and Number:
Japanese Patent JP2002513375
Kind Code:
A
Abstract:
The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700° C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10° C./cm.
Inventors:
Polowski, Sylvester
Bochkovski, Mihau
Gudjegoshi, Isabella
Krkowski, Stanislaw
Leschhunski, Mihau
Utunik, Boslelaw
Susuki, Tadeusz
Vlewrevski, Miloslaw
Bochkovski, Mihau
Gudjegoshi, Isabella
Krkowski, Stanislaw
Leschhunski, Mihau
Utunik, Boslelaw
Susuki, Tadeusz
Vlewrevski, Miloslaw
Application Number:
JP50218799A
Publication Date:
May 08, 2002
Filing Date:
June 03, 1998
Export Citation:
Assignee:
Centrum Badani Vysokotishini Yeniov Polskiei Academia Nauk
International Classes:
C30B9/00; C30B29/38; C30B11/00; (IPC1-7): C30B29/38
Attorney, Agent or Firm:
Yasuhiko Takeishi (2 outside)