Title:
【発明の名称】過剰CVD反応物の制御方法及びその装置
Document Type and Number:
Japanese Patent JP2002527629
Kind Code:
A
Abstract:
Method and apparatus for controlling deposition from excess gaseous reactant in an exhaust conduit of a chemical vapor deposition apparatus involves introducing a gaseous chemical reactant in the exhaust stream effective to react with the excess gaseous reactant in the exhaust stream to form solid reaction product particulates in a manner that reduces harmful deposition of liquid and/or solid metal in the exhaust system.
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Inventors:
Near Daniel El.
Warnes Bruce M.
Winters Stefan M.
Warnes Bruce M.
Winters Stefan M.
Application Number:
JP2000577343A
Publication Date:
August 27, 2002
Filing Date:
October 14, 1999
Export Citation:
Assignee:
Homet Research Corporation
International Classes:
C23C16/44; H01L21/285; (IPC1-7): C23C16/44; H01L21/285
Domestic Patent References:
| JPH09249974A | 1997-09-22 | |||
| JPH09249974A | 1997-09-22 |
Foreign References:
| US5407704A | 1995-04-18 | |||
| US5407704A | 1995-04-18 |
Attorney, Agent or Firm:
Yoshimi Saigo