Title:
【発明の名称】アルミニウムフリー閉じ込め層を有する埋め込みリッジ半導体レーザ
Document Type and Number:
Japanese Patent JP2003502851
Kind Code:
A
Abstract:
A buried ridge semiconductor diode laser, preferably based on the GaAs and AlGaAs family of materials. The thin upper cladding layer is overlaid with an aluminum-free etch stop layer and an aluminum-free confinement layer, preferably of GaInP, of opposite conductivity type opposite that of the upper cladding layer. A trench is formed in the confinement layer extending down to the etch stop layer. Additional AlGaAs is regrown in the aperture to form a buried ridge. During the regrowth, no aluminum is exposed either at the bottom or on the sides of the aperture. The confinement layer is preferably lattice matched to the AlGaAs. The thin etch stop layer preferably has the same conductivity type and the same bandgap as the AlGaAs sandwiching it. For lasers producing shorter wavelength radiation, the aluminum content of the AlGaAs cladding layers is increased and some aluminum is added to the confinement layer but less than that of the cladding layers.
Inventors:
The Chun-En
Application Number:
JP2001504048A
Publication Date:
January 21, 2003
Filing Date:
May 16, 2000
Export Citation:
Assignee:
Corning Incorporated
International Classes:
H01S5/223; H01S5/22; H01S5/343; (IPC1-7): H01S5/223
Domestic Patent References:
| JPH10200201A | 1998-07-31 | |||
| JPH0677588A | 1994-03-18 | |||
| JPS62176183A | 1987-08-01 | |||
| JPH04218994A | 1992-08-10 |
Attorney, Agent or Firm:
Fujihiko Motohiko