【発明の名称】シリコンウェーハに酸素イオンを注入する方法及び装置

Title:

【発明の名称】シリコンウェーハに酸素イオンを注入する方法及び装置

Document Type and Number:

Japanese Patent JP2003506841

Kind Code:

A

Abstract:

An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1x10⁶/cm², includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

Inventors:

Doran, Robert
Coats, burn hard
Farley, Marvin
Riding, jeffrey

Application Number:

JP2001515892A

Publication Date:

February 18, 2003

Filing Date:

June 22, 2000

Export Citation:

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Assignee:

Ibis Technology Incorporated

International Classes:

H01J37/317; H01L21/02; H01L21/265; H01L21/316; H01L27/12; H01J37/04; (IPC1-7): H01J37/317; H01J37/04; H01L21/265; H01L21/316; H01L27/12

Domestic Patent References:

JPH1174213A	1999-03-16
JPH07258846A	1995-10-09
JPH0992804A	1997-04-04

Attorney, Agent or Firm:

Heiyoshi Odashima

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