Title:
フォトマスクおよびその光学的特性を保守する方法
Document Type and Number:
Japanese Patent JP2007503621
Kind Code:
A
Abstract:
A photomask and method for maintaining optical properties of the same are disclosed. The method includes providing a substrate including a first surface having an absorber layer formed thereon and a second surface located opposite the first surface. A pattern is formed in the absorber layer to create a photomask for use in a semiconductor manufacturing process. A transmissive protective layer is also formed on at least one of the patterned layer and the second surface of the substrate. The protective layer reduces haze growth when the photomask is used in the semiconductor manufacturing process.
Inventors:
Diu, Laurent
Gordon, Zouzyf, Stephen
Janstoun, Erik, Vinsanto
Shovino, Christian
Gordon, Zouzyf, Stephen
Janstoun, Erik, Vinsanto
Shovino, Christian
Application Number:
JP2006524792A
Publication Date:
February 22, 2007
Filing Date:
August 24, 2004
Export Citation:
Assignee:
Toppan, foutamasks, ink
International Classes:
G03F1/08; G03F1/14; G03F9/00; H01L21/027; G03F
Domestic Patent References:
| JP2004537070A | 2004-12-09 | |||
| JPH04104153A | 1992-04-06 | |||
| JPS6386435A | 1988-04-16 | |||
| JPH103162A | 1998-01-06 | |||
| JPH11212246A | 1999-08-06 | |||
| JP2001056544A | 2001-02-27 | |||
| JP2001290257A | 2001-10-19 | |||
| JP2002268202A | 2002-09-18 | |||
| JPS57179850A | 1982-11-05 | |||
| JPS6087327A | 1985-05-17 | |||
| JPS63293819A | 1988-11-30 | |||
| JPS6488550A | 1989-04-03 | |||
| JPH07192997A | 1995-07-28 | |||
| JPH07325384A | 1995-12-12 | |||
| JPH10186628A | 1998-07-14 | |||
| JPH11195603A | 1999-07-21 |
Foreign References:
| WO2003010606A1 | 2003-02-06 |
Attorney, Agent or Firm:
Yuzo Sanada
Nobuhiko Nakajima
Ohara Shizuo
Nobuhiko Nakajima
Ohara Shizuo