Title:
半導体メモリデバイス、および半導体メモリデバイスを動作させる方法
Document Type and Number:
Japanese Patent JP2007504577
Kind Code:
A
Abstract:
The method involves activating memory cells of a first sub-array, accessing the corresponding cells, and leaving the sub-array cells in the active state if an access is to be made to one or more further memory cells contained in a second sub-array of the same memory cell array. The cells of the first sub-array are deactivated only if access to additional cells is to be made that are contained in a third memory cell sub-array, if the sense amplifiers of this sub-array are also used by the first sub-array. An independent claim is included for a semiconductor memory device.
Inventors:
Brox, martin
Application Number:
JP2006524351A
Publication Date:
March 01, 2007
Filing Date:
July 09, 2004
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
G11C11/407; G11C7/22; G11C8/12; G11C11/401; G11C11/4076; G11C11/4096
Attorney, Agent or Firm:
Kenzo Hara International Patent Office