Title:
半導体構造
Document Type and Number:
Japanese Patent JP2007535137
Kind Code:
A
Abstract:
The invention concerns a semiconductor structure comprising at least one first material region and a second material region, whereby the second material region epitaxially surrounds the first material region and forms a boundary surface. The structure is characterized in that Fermi level pinning is present on the non-epitaxial boundary surface of the second material region located opposite the boundary surface of both material regions, and the first material region forms a quantum well for free charge carriers. This advantageously results in enabling a controllable charge carrier concentration to be set in the quantum well
Inventors:
Indian recorder michael
Rate Hans
Forster Arnold
Rate Hans
Forster Arnold
Application Number:
JP2006551710A
Publication Date:
November 29, 2007
Filing Date:
January 21, 2005
Export Citation:
Assignee:
Forschungszentrum Jürich Gesellschaft Mitt Beschlenktel Haftung
International Classes:
H01L29/06; H01L29/12; H01L29/775; H01L33/06; H01L33/24; H01S5/34
Domestic Patent References:
| JP2004532133A | 2004-10-21 | |||
| JPH08255898A | 1996-10-01 | |||
| JPH02111036A | 1990-04-24 | |||
| JPH04174560A | 1992-06-22 | |||
| JPH07142513A | 1995-06-02 | |||
| JP2004532133A | 2004-10-21 |
Foreign References:
| WO2002080280A1 | 2002-10-10 |
Attorney, Agent or Firm:
Mitsufumi Esaki
Okumura Yoshimichi
Blacksmith
Okumura Yoshimichi
Blacksmith