Title:
スピン転移を利用する高速磁気メモリ装置及びそれに用いられる磁気素子
Document Type and Number:
Japanese Patent JP2008546129
Kind Code:
A
Abstract:
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
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Inventors:
Diao, Cheetah
Phi, Imine
Pakara, Mahendra
Chiang, Jen Hong
Phi, Imine
Pakara, Mahendra
Chiang, Jen Hong
Application Number:
JP2008515905A
Publication Date:
December 18, 2008
Filing Date:
June 07, 2006
Export Citation:
Assignee:
GRANDIS,INC.
International Classes:
G11C11/15; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
| JP2001236781A | 2001-08-31 | |||
| JP2001266567A | 2001-09-28 | |||
| JP2002298572A | 2002-10-11 | |||
| JP2002230965A | 2002-08-16 | |||
| JP2005050907A | 2005-02-24 |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Atsushi Honda
Miho Ikegami
Makoto Onda
Atsushi Honda
Miho Ikegami