Title:
半絶縁エピタキシー上の炭化ケイ素および関連ワイドバンドギャップトランジスタ
Document Type and Number:
Japanese Patent JP2009542005
Kind Code:
A
Abstract:
A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.
Inventors:
Mats Aura Michael S
Application Number:
JP2009516677A
Publication Date:
November 26, 2009
Filing Date:
June 19, 2007
Export Citation:
Assignee:
SEMISOUTH LABORATORIES, INC.
International Classes:
H01L21/02; H01L21/20; H01L21/265; H01L21/331; H01L21/337; H01L21/8222; H01L21/8232; H01L21/8248; H01L27/06; H01L27/12; H01L29/161; H01L29/73; H01L29/78; H01L29/80; H01L29/808
Domestic Patent References:
| JPH05175239A | 1993-07-13 | |||
| JP2005520322A | 2005-07-07 | |||
| JP2005285955A | 2005-10-13 | |||
| JP2002519851A | 2002-07-02 | |||
| JP2007529885A | 2007-10-25 |
Foreign References:
| US20020149021A1 | 2002-10-17 | |||
| WO2005089303A2 | 2005-09-29 |
Attorney, Agent or Firm:
Masahiro Abe