Title:
光起電デバイス用の微結晶シリコン膜を堆積するための方法および装置
Document Type and Number:
Japanese Patent JP2009542008
Kind Code:
A
Abstract:
Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.
Inventors:
Choi, Soo Young
Naoko Takehara
White, John M.
Choi, Yonki
Naoko Takehara
White, John M.
Choi, Yonki
Application Number:
JP2009516709A
Publication Date:
November 26, 2009
Filing Date:
June 20, 2007
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L31/04
Domestic Patent References:
| JP2002016006A | 2002-01-18 | |||
| JP2001284612A | 2001-10-12 | |||
| JPH11145498A | 1999-05-28 | |||
| JP2002246619A | 2002-08-30 | |||
| JP2005167264A | 2005-06-23 |
Foreign References:
| US20050251990A1 | 2005-11-17 | |||
| US20060060138A1 | 2006-03-23 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Ikeda adult
Yuichi Yamada
Ikeda adult