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Title:
三次元六角形マトリックスメモリアレイとその製造方法
Document Type and Number:
Japanese Patent JP2011508973
Kind Code:
A
Abstract:
A nonvolatile memory device includes a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern. The nonvolatile memory cells may be pillar shaped non-volatile memory cells which can be patterned using triple or quadruple exposure lithography or by using a self-assembling layer.

Inventors:
Shah Ewell Line, Roy E.
Petty, Christopher Jay.
Application Number:
JP2010540629A
Publication Date:
March 17, 2011
Filing Date:
November 05, 2008
Export Citation:
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Assignee:
SanDisk Three Day, LRC
International Classes:
H01L27/105; H01L21/8246; H01L27/00; H01L27/10; H01L27/28; H01L45/00; H01L49/00; H01L51/05; H01L51/30
Domestic Patent References:
JP2006269763A2006-10-05
JP2003188353A2003-07-04
JP2004118997A2004-04-15
JP2004193282A2004-07-08
Foreign References:
US6951780B12005-10-04
Attorney, Agent or Firm:
Toshi Inoguchi



 
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