Title:
原子層堆積のための溶液ベースのジルコニウム前駆体
Document Type and Number:
Japanese Patent JP2012526811
Kind Code:
A
Abstract:
Oxygen free, solution based zirconium precursors for use in ALD processes are disclosed for growing ZrO2 or other Zr compound films in a self-limiting and conformal manner. An oxygen free, solution based ALD precursor of (t-BuCp)2ZrMC2 is particular useful for depositing ZrO2 or other Zr compound films.
Inventors:
Ma
Kim, Key-Chan
McFarlane, Graham Anthony
Kim, Key-Chan
McFarlane, Graham Anthony
Application Number:
JP2012510812A
Publication Date:
November 01, 2012
Filing Date:
April 12, 2010
Export Citation:
Assignee:
Linde Aktiengesellschaft
International Classes:
C07F7/00; C23C16/40; H01L21/314
Domestic Patent References:
| JP2001355070A | 2001-12-25 | |||
| JPH04232272A | 1992-08-20 | |||
| JP2006310865A | 2006-11-09 |
Foreign References:
| WO2007140813A1 | 2007-12-13 |
Attorney, Agent or Firm:
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Morishita Azusa
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Morishita Azusa