Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2018157068
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a storage device capable of suppressing a half selected leak current.SOLUTION: The storage device includes: a first conductive layer; a second conductive layer; and a first metal oxide layer having a first region containing titanium oxide located between the first conductive layer and the second conductive layer, a mole fraction of an anatase type titanium oxide in the titanium oxide being the first mole fraction and a second region in which a mole fraction of the anatase type titanium oxide in the titanium oxide is a second mole fraction lower than the first mole fraction.SELECTED DRAWING: Figure 2
Inventors:
SAITO MASUMI
ISHIKAWA TAKAYUKI
TACHIKAWA TAKU
YAMAGUCHI MARINA
ISHIKAWA TAKAYUKI
TACHIKAWA TAKU
YAMAGUCHI MARINA
Application Number:
JP2017052772A
Publication Date:
October 04, 2018
Filing Date:
March 17, 2017
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama
Akira Sudo
Mitsuyuki Matsuyama