Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018195775
Kind Code:
A
Abstract:
To provide a semiconductor device with improved protection capability of an ESD protection circuit.SOLUTION: A semiconductor device comprises: a first transistor including a substrate and a first impurity region and a second impurity region of a first conductivity type; a second transistor formed on the substrate and including a third impurity region and a fourth impurity region of the first conductivity type electrically connected to the second impurity region; a power supply terminal electrically connected to the first impurity region; a ground terminal electrically connected to the fourth impurity region; a first guard ring formed on the substrate, surrounding the first transistor in a plan view, electrically connected to the ground terminal, and having a second conductivity type different from the first conductivity type; and a second guard ring formed on the substrate, surrounding the second transistor on a plan view, electrically connected to the ground terminal, having the second conductivity type, and having a narrower width than the first guard ring on a plan view.SELECTED DRAWING: Figure 2
Inventors:
TANAKA HIDETOSHI
Application Number:
JP2017100704A
Publication Date:
December 06, 2018
Filing Date:
May 22, 2017
Export Citation:
Assignee:
SOCIONEXT INC
International Classes:
H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito