Title:
FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
Document Type and Number:
Japanese Patent JP2019161142
Kind Code:
A
Abstract:
To provide a field effect transistor, easy to manufacture, with good contact between source and drain electrodes and an oxide semiconductor, with a little characteristic variation.SOLUTION: The field effect transistor includes: a source electrode 4 and a drain electrode 5; and an active layer 6 made of an oxide semiconductor. The source electrode and the drain electrode contain a gold alloy in contact with the oxide semiconductor. The gold alloy contains gold which is a first element and a second element which is at least one of germanium, tin, zinc and, indium.SELECTED DRAWING: Figure 1
Inventors:
MATSUMOTO SHINJI
UEDA NAOYUKI
ANDO YUICHI
NAKAMURA YUKI
ABE YUKIKO
SONE YUJI
SAOTOME RYOICHI
NIIE SADANORI
KUSAYANAGI MINEHIDE
UEDA NAOYUKI
ANDO YUICHI
NAKAMURA YUKI
ABE YUKIKO
SONE YUJI
SAOTOME RYOICHI
NIIE SADANORI
KUSAYANAGI MINEHIDE
Application Number:
JP2018048867A
Publication Date:
September 19, 2019
Filing Date:
March 16, 2018
Export Citation:
Assignee:
RICOH CO LTD
International Classes:
H01L29/786; G09F9/30; G09F9/37; H01L21/28; H01L27/32; H01L29/417; H01L51/50; H05B33/14
Domestic Patent References:
| JP2006186319A | 2006-07-13 | |||
| JP2008281988A | 2008-11-20 | |||
| JP2017195355A | 2017-10-26 |
Foreign References:
| WO2017135029A1 | 2017-08-10 | |||
| WO2013035842A1 | 2013-03-14 | |||
| US20170097543A1 | 2017-04-06 |
Attorney, Agent or Firm:
Koichi Hirota