Title:
SUBSTRATE PROCESSING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
Document Type and Number:
Japanese Patent JP2020017695
Kind Code:
A
Abstract:
To change an atmosphere of a transfer chamber according to a type of a process and a film type to be formed.SOLUTION: A substrate processing device comprises: an intake damper and an intake fan communicating with an intake port which takes ambient air into the transfer chamber linked to a processing chamber for substrate processing; a valve of an inactive gas introduction pipe which supplies an inactive gas to the transfer chamber; an exhaust fan and an exhaust valve provided in the transfer chamber; switching means for selecting atmosphere mode for switching the atmosphere of the transfer chamber to air atmosphere or purge mode for switching atmosphere of the transfer chamber to inactive gas atmosphere; and control means configured so as to execute atmosphere mode or purge mode by respectively controlling the intake damper and the intake fan, the valve of the inactive gas introduction pipe, and the exhaust fan and the exhaust valve.SELECTED DRAWING: Figure 7
Inventors:
TAKAHATA SATORU
NUNOMURA ICHIRO
IIDA TSUKASA
SEKIHARA HITOSHI
TSUTSUGUCHI KAZUNORI
SHIBATA HITOSHI
NUNOMURA ICHIRO
IIDA TSUKASA
SEKIHARA HITOSHI
TSUTSUGUCHI KAZUNORI
SHIBATA HITOSHI
Application Number:
JP2018141216A
Publication Date:
January 30, 2020
Filing Date:
July 27, 2018
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP
International Classes:
H01L21/31; C23C16/44
Domestic Patent References:
| JP2008141176A | 2008-06-19 | |||
| JP2009065113A | 2009-03-26 | |||
| JP2004119888A | 2004-04-15 | |||
| JP2009253217A | 2009-10-29 |
Attorney, Agent or Firm:
Patent Business Corporation IP Win