Title:
GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020035931
Kind Code:
A
Abstract:
To provide a semiconductor device having high controllability of a threshold voltage.SOLUTION: A gallium nitride based semiconductor device includes a gallium nitride based semiconductor substrate, a silicon oxide film provided in contact with the upper surface of the semiconductor substrate, and an electrode portion provided on the silicon oxide film, and the silicon oxide film has a high-concentration nitrogen region where the concentration of nitrogen is 1.0×10/cmor more and 1.0×10/cmor less in a portion in contact with the upper surface of the semiconductor substrate. The thickness of the high-concentration nitrogen region in the depth direction orthogonal to the upper surface of the semiconductor substrate is 1 nm or more, and the concentration of gallium in a region between the high-concentration nitrogen region and the electrode portion in the silicon oxide film is 1.0×10/cmor less.SELECTED DRAWING: Figure 1
Inventors:
UENO KATSUNORI
MATSUYAMA HIDEAKI
EDO MASAHARU
WATABE HEIJI
YAMADA TAKAHIRO
HOSOI TAKUJI
NOZAKI MIKITO
SHIMURA TAKAYOSHI
MATSUYAMA HIDEAKI
EDO MASAHARU
WATABE HEIJI
YAMADA TAKAHIRO
HOSOI TAKUJI
NOZAKI MIKITO
SHIMURA TAKAYOSHI
Application Number:
JP2018162064A
Publication Date:
March 05, 2020
Filing Date:
August 30, 2018
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
UNIV OSAKA
UNIV OSAKA
International Classes:
H01L29/78; C23C16/42; C23C16/56; C30B29/38; H01L21/316; H01L21/336; H01L29/12
Domestic Patent References:
| JP2017174988A | 2017-09-28 | |||
| JP2016054250A | 2016-04-14 | |||
| JP2017168470A | 2017-09-21 | |||
| JP2016143842A | 2016-08-08 | |||
| JPH0324268A | 1991-02-01 | |||
| JP2009076673A | 2009-04-09 | |||
| JP2018056348A | 2018-04-05 | |||
| JP2012156245A | 2012-08-16 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation