Title:
CHEMICAL MECHANICAL POLISHING PAD AND POLISHING METHOD
Document Type and Number:
Japanese Patent JP2020099990
Kind Code:
A
Abstract:
To provide an improved chemical mechanical polishing pad having higher CMP planarization performance and productivity, and a chemical mechanical polishing method.SOLUTION: A chemical mechanical polishing pad comprises a polishing layer having a constant positive zeta potential across its entire surface. Further, a chemical mechanical polishing method uses a positively charged slurry, and the chemical mechanical polishing pad comprising the polishing layer having the positive zeta potential.SELECTED DRAWING: None
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Inventors:
MATTHEW R GADINSKI
MOHAMMAD T ISLAM
YI GWO
GEORGE C JACOB
MOHAMMAD T ISLAM
YI GWO
GEORGE C JACOB
Application Number:
JP2019198323A
Publication Date:
July 02, 2020
Filing Date:
October 31, 2019
Export Citation:
Assignee:
ROHM & HAAS ELECTRONIC MAT CMP HOLDINGS INC
International Classes:
B24B37/24; B24B37/00; C08G18/10; C08G18/18; C08G18/32; H01L21/304
Domestic Patent References:
JP2017139443A | 2017-08-10 | |||
JP2018171702A | 2018-11-08 | |||
JP2005129644A | 2005-05-19 | |||
JP2012528487A | 2012-11-12 | |||
JP2018043342A | 2018-03-22 | |||
JP2001048858A | 2001-02-20 |
Foreign References:
WO2017138564A1 | 2017-08-17 |
Attorney, Agent or Firm:
Patent business corporation Tsukuni