Title:
ETCHING PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2021013015
Kind Code:
A
Abstract:
To improve a selection ratio of an underlayer to an etching target film.SOLUTION: An etching processing method includes: a step of preparing, in a processing container, a substrate on which a laminated film having at least a silicon-containing insulating layer, an underlying layer disposed below the silicon-containing insulating layer, and a mask layer disposed above the silicon-containing insulating layer, is formed; a step of supplying a processing gas containing at least a fluorocarbon gas and a rare gas; and a step of etching the laminated film by generating plasma in the processing container to which the processing gas is supplied. The rare gas comprises a first gas having a higher ionization energy than an Ar gas and whose kinetic momentum of an ionized single particle is lower than kinetic momentum of one particle of an ionized Ar gas.SELECTED DRAWING: Figure 3
Inventors:
SHIMODA MANABU
SAWADAISHI MASAYUKI
ETO TAKANORI
SAWADAISHI MASAYUKI
ETO TAKANORI
Application Number:
JP2020079687A
Publication Date:
February 04, 2021
Filing Date:
April 28, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065; H01L21/3205; H01L21/336; H01L21/768; H01L23/532; H01L27/11556; H01L27/11582; H01L29/788; H01L29/792; H05H1/46
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito