Title:
EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2021027298
Kind Code:
A
Abstract:
To provide an epitaxial substrate in which a group III-nitride semiconductor layer is formed on a Si substrate, and in which plastic deformation of the Si substrate is suppressed.SOLUTION: The epitaxial substrate has a Si substrate with a diameter of 4 inches or more and a laminated structure formed above the Si substrate and composed of group III-nitride semiconductors. The Si substrate has an annular slip generation region with a width of 4 mm or less along the periphery of the Si substrate for the entire length of the periphery on a surface on a side where the laminated structure is formed. A slip generation state at the surface is evaluated by X-ray topography.SELECTED DRAWING: Figure 5
Inventors:
IKEJIRI KEITARO
OSADA TAKENORI
TANAKA MITSUHIRO
OSADA TAKENORI
TANAKA MITSUHIRO
Application Number:
JP2019146695A
Publication Date:
February 22, 2021
Filing Date:
August 08, 2019
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO
International Classes:
H01L21/205; C23C16/30; C23C16/34; C23C16/52; C30B25/18; C30B29/38
Attorney, Agent or Firm:
Fukuoka Masahiro
Hideo Tachibana
Hideo Tachibana