Title:
DEPOSITION METHOD AND DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2021057439
Kind Code:
A
Abstract:
To provide a technique that can form a semiconductor film selectively on a nitride film among the nitride film and an oxide film.SOLUTION: A deposition method includes the steps of: supplying a fluorine-containing gas to a substrate in which a region where a nitride film is exposed and a region where an oxide film is exposed are adjacent, selectively etching the nitride film among the nitride film and the oxide film while fixing fluorine on the substrate, depressing a surface of the nitride film to be lower than a surface of the oxide film to form a stepped surface at a side surface of the oxide film; and after forming the stepped surface while fixing fluorine on the substrate, supplying a source gas including a semiconductor material to the substrate and forming a semiconductor film selectively on the nitride film among the nitride film and the oxide film.SELECTED DRAWING: Figure 1
More Like This:
| JP3194256 | METHOD AND APPARATUS FOR GROWING FILM |
| JP4849296 | GaN substrate |
Inventors:
TAKAGI SATOSHI
KITAMURA KAZUYA
CAI XIU LIN
KITAMURA KAZUYA
CAI XIU LIN
Application Number:
JP2019178592A
Publication Date:
April 08, 2021
Filing Date:
September 30, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/205; C23C16/02; C23C16/04; C23C16/56; H01L21/31
Domestic Patent References:
| JP2012069964A | 2012-04-05 | |||
| JPH08153688A | 1996-06-11 |
Foreign References:
| WO2007013464A1 | 2007-02-01 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito