Title:
DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2021125292
Kind Code:
A
Abstract:
To provide a device structure manufacturing method capable of manufacturing a device structure which includes a layer containing silicon nitride and has a sealing layer capable of suppressing cracks.SOLUTION: In a device structure manufacturing method including a step (a) of preparing a base material and a multi-layered material having an element portion provided on the base material, and a step (b) of forming a sealing layer for sealing the element portion, the step of forming the sealing layer (b) includes a step of forming a first sealing layer (b1) and a step of forming a second sealing layer (b2), the step (b1) of forming the first sealing layer (b1) includes a step (b1-1) of forming a first intermediate layer containing thermoplastic elastomer and a solvent, and a step (b1-2) of drying the first intermediate layer, and the step (b2) of forming the second sealing layer includes a step (b2-1) of forming a second intermediate layer containing a polysilazane compound, and a step (b2-2) of irradiating the second intermediate layer with ultraviolet rays.SELECTED DRAWING: Figure 1
Inventors:
KASHIWAGI MOTOFUMI
Application Number:
JP2020015463A
Publication Date:
August 30, 2021
Filing Date:
January 31, 2020
Export Citation:
Assignee:
NIPPON ZEON CO
International Classes:
H05B33/10; H01L51/50; H05B33/04
Domestic Patent References:
| JP2017504174A | 2017-02-02 |
Foreign References:
| WO2019220896A1 | 2019-11-21 |
Attorney, Agent or Firm:
Sakai International Patent Office