Title:
SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2021134380
Kind Code:
A
Abstract:
To provide a sputtering target capable of suppressing a generation of a nodule and a particle in sputtering and stably performing a sputtering film deposition even in a case of performing a sputtering film deposition of a Ge-Sb-Te alloy film containing a Si.SOLUTION: A sputtering target containing Ge, Sb, and Te further contains Si, a content of Si being 60 atom% or less. A Si particle 12 is dispersed in a matrix of a Ge-Sb-Te phase 11.SELECTED DRAWING: Figure 1
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Inventors:
HAYASHI YUJIRO
HORIUCHI KEIZO
HORIUCHI KEIZO
Application Number:
JP2020030240A
Publication Date:
September 13, 2021
Filing Date:
February 26, 2020
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; G11B7/243; G11B7/2433; G11B7/26
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami