Title:
【発明の名称】半導体加速度センサおよびその製造方法
Document Type and Number:
Japanese Patent JP2586359
Kind Code:
B2
Abstract:
A P-type impurity is diffused into an N-type epitaxial layer formed on a P-type silicon substrate. A gauge resistor for measuring deformation is formed on this epitaxial layer, with an aluminum wiring provided between the gauge resistor and a pad. Then, bottom-surface etching is performed on the resultant structure to remove a groove portion, thus forming a cantilever, weight portion and rim portion. The groove portion between the weight portion and rim portion is formed to penetrate through the P-type diffusion layer and become narrower toward the top surface from the bottom surface, thus preventing dust or the like from entering the groove portion. The etching from the bottom can reduce the number of required etching steps, ensuring lower fabrication cost.
More Like This:
Inventors:
KONDO JUJI
Application Number:
JP40262690A
Publication Date:
February 26, 1997
Filing Date:
December 17, 1990
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G01P15/08; G01P15/12; H01L21/3063; H01L29/84; (IPC1-7): G01P15/12; H01L29/84
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)