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Title:
【発明の名称】光スイツチング電子放出素子
Document Type and Number:
Japanese Patent JP2603233
Kind Code:
B2
Abstract:
PURPOSE:To realize a compact optical switching electron emitting element by integrally laminating and constituting a junction type optoelectric transducer performing optoelectric-converting incident beams, and an electron emitting element emitting electrons in response to output currents from the transducer. CONSTITUTION:A P-I-N photodiode is organized of a p<+> layer 1, an i layer 2 and an n<+> layer 3, while an electron emitting element is laminated integrally onto the P-I-N photodiode. The electron emitting element is organized of a conductive layer 4, an insulating layer 5 and a metallic layer 6. When reverse bias voltage VR is applied between the p<+> layer 1 and the n<+> layer 3 and voltage V is applied between the conductive layer 4 and the metallic layer 6 in an optical switching electron emitting element constructed in this manner, carrier electrons generated by optical absorption are injected to the conductive layer 4, and the injected electrons are accelerated in speed, and emitted from the metallic layer 6.

Inventors:
Suzuki Akira
Takeo Tsukamoto
Akira Shimizu
Masao Sugada
Shimoda Isamu
Masahiko Okunuki
Application Number:
JP1819187A
Publication Date:
April 23, 1997
Filing Date:
January 30, 1987
Export Citation:
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Assignee:
Canon Inc
International Classes:
H01L31/10; H01J1/30; H01J1/312; H01J1/34; H01L49/00; (IPC1-7): H01J1/34; H01J1/30; H01L31/10
Domestic Patent References:
JP63141235A
JP63150829A
JP4733537Y1
Attorney, Agent or Firm:
Yamashita



 
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