Title:
【発明の名称】コンタクトの形成方法
Document Type and Number:
Japanese Patent JP2660072
Kind Code:
B2
Abstract:
A method for forming a contact region includes the steps of forming an insulating layer (14) on a silicon-based semiconductor substrate (11) a having predetermined semiconductor region formed in the surface portion thereof, and forming a contact hole (15, 16), partially exposing the semiconductor region. A transition metal layer (17) is on the exposed semiconductor region. A silicide layer (19, 20) is formed within the contact hole (15, 16) through a reaction of the transition metal layer (17) with the silicon in the substrate (11). Finally, a tungsten layer (21, 22) is formed on the silicide layer (19, 20).
Inventors:
YODA TAKASHI
WATANABE TOORU
WATANABE TOORU
Application Number:
JP29329089A
Publication Date:
October 08, 1997
Filing Date:
November 10, 1989
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/28; H01L21/285; H01L21/316; H01L21/768; (IPC1-7): H01L21/28
Domestic Patent References:
| JP62145774A | ||||
| JP6328867A |
Attorney, Agent or Firm:
Norio Ogo