Title:
【発明の名称】半導体メモリ装置の製造方法
Document Type and Number:
Japanese Patent JP2677490
Kind Code:
B2
Abstract:
Disclosed are a semiconductor memory device and method for manufacturing the same. The method includes a process for manufacturing a capacitor performed by the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern composed of a 1st first-material layer on the first conductive layer, forming a first sidewall spacer composed of 1st second-material layer on the resultant structure, and etching the material layer under the first sidewall spacer, using the first sidewall spacer as an etch-mask. The semiconductor memory device thus manufactured can be highly integrated and is highly reliable.
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Inventors:
Tomohiro An
Application Number:
JP22422792A
Publication Date:
November 17, 1997
Filing Date:
August 24, 1992
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/033; H01L21/822; H01L21/8242; H01L27/10; H01L27/04; H01L27/108; (IPC1-7): H01L27/108; H01L21/822; H01L21/8242; H01L27/04
Domestic Patent References:
| JP1243573A | ||||
| JP62128168A | ||||
| JP456265A | ||||
| JP3142966A |
Other References:
【文献】“VLSI TECHNOLOGY”S.M.Sze(1988)McGrow Hill Book Co.p200-p204
Attorney, Agent or Firm:
Hattori Masaki