Title:
【発明の名称】半導体光素子
Document Type and Number:
Japanese Patent JP2746326
Kind Code:
B2
Abstract:
A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a strained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.
Inventors:
Otoshi So
Shinji Sakano
Kazuhisa Uomi
Naoki Kaya
Shinji Sakano
Kazuhisa Uomi
Naoki Kaya
Application Number:
JP139189A
Publication Date:
May 06, 1998
Filing Date:
January 10, 1989
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
G02B6/122; G02F1/015; G02F1/025; G02F1/313; H01S5/00; H01S5/0625; H01S5/11; H01S5/34; H01S5/026; H01S5/14; H01S5/227; (IPC1-7): H01S3/18; G02F1/015
Domestic Patent References:
| JP6394230A | ||||
| JP63197391A |
Attorney, Agent or Firm:
Junnosuke Nakamura