Title:
【発明の名称】アンチヒューズ構造体およびその製造方法
Document Type and Number:
Japanese Patent JP2759183
Kind Code:
B2
Abstract:
An anti-fuse structure characterized by a substrate, an oxide layer formed over the substrate having an opening formed therein, an amorphous silicon material disposed within the opening and contacting the substrate, a conductive protective material, such as titanium tungsten, disposed over the amorphous silicon material, and oxide spacers lining the walls of a recess formed within the protective material. The protective material and the spacers provide tighter programming voltage distributions for the anti-fuse structure and help prevent anti-fuse failure.
Inventors:
BOODOMAN UIRIAMU JEI
CHAN DEBITSUDO HOOKUWAN
CHAN KUANNIE
GABURIERU KARUBIN TEI
JEIN BIBETSUKU
NARIANI SABATSUSHU AARU
CHAN DEBITSUDO HOOKUWAN
CHAN KUANNIE
GABURIERU KARUBIN TEI
JEIN BIBETSUKU
NARIANI SABATSUSHU AARU
Application Number:
JP50363192A
Publication Date:
May 28, 1998
Filing Date:
July 24, 1992
Export Citation:
Assignee:
BUI ERU ESU AI TEKUNOROJII INC
International Classes:
H01L21/82; H01L21/768; H01L23/525; H01L27/10; (IPC1-7): H01L21/82; H01L27/10
Domestic Patent References:
| JP60136334A | ||||
| JP5772368A |
Attorney, Agent or Firm:
Takao Igarashi (1 outside)