Title:
【発明の名称】スパッタ装置シミュレーション方法
Document Type and Number:
Japanese Patent JP2806349
Kind Code:
B2
Abstract:
A simulation apparatus for simulating and optimizing a configuration of a sputtering apparatus including a target surface temperature calculating unit for calculating a temperature of a target surface in consideration of cooling of the target, an atom initial velocity calculating unit for calculating an initial velocity of atoms within the target based on the calculated target surface temperature, an ion incidence rate calculating unit for calculating an incidence rate of the incident ions into the target to determine a position at which the incident ions collide against the target, an atom trajectory calculating unit for obtaining trajectories of atoms within the target based on each of calculation results and a sputtered atom ejection angle distribution unit for extracting sputtered atoms based on the calculation results to obtain ejection angle distribution.
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Inventors:
Hiroaki Yamada
Toshiyuki Ota
Toshiki Niimura
Toshiyuki Ota
Toshiki Niimura
Application Number:
JP5568296A
Publication Date:
September 30, 1998
Filing Date:
March 13, 1996
Export Citation:
Assignee:
NEC
International Classes:
G06F17/50; H01L21/00; H01L21/203; C23C14/34; (IPC1-7): C23C14/34; G06F17/50; H01L21/203
Domestic Patent References:
JP3171301A | ||||
JP529257A | ||||
JP6280010A | ||||
JP8274084A | ||||
JP925572A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)