Title:
【発明の名称】不揮発性半導体記憶装置の製造方法
Document Type and Number:
Japanese Patent JP2876670
Kind Code:
B2
Abstract:
PURPOSE:To prevent a polycrystal film being brought into electrically floating state by a method wherein insulating films are formed only on the sidewall parts of element isolating grooves which are filled with polycrystal silicon film doped with an impurity of the same conductivity type as that of a substrate. CONSTITUTION:When etching grooves 9 are formed by laminating the first gate insulating film 3 of SiO2, a polycrystal silicon film 3 doped with an N type impurity, the second insulating film 4 of SiO2, etc., comprising high-temperature oxidized film 3, the second polycrystal silicon film 5 doped with the N type impurity, a silicon nitride film 5 using CVD process and a patterning mask 7 on a P type Si substrate 1 and then an interlayer insulating film 8 in excellent form retention is deposited in the grooves 9 to perform the anisotropical etching process, the film 8 is formed only on the sidewall parts of the grooves 9 to expose the substrate 1. Accordingly, when polycrystal silicon film 10 of the same conductivity type as that of the third substrate doped with P type impurity is filled in the grooves 9, the film 10 can be prevented from being brought into the electrically floating state while the element isolation region can be fixed to the substrate potential thereby enabling the interelement isolation of the title non-volatile semiconductor memory to be assured.
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Inventors:
INOE TATSURO
Application Number:
JP33964789A
Publication Date:
March 31, 1999
Filing Date:
December 26, 1989
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L21/8247; H01L21/76; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L27/115; H01L21/76; H01L21/8247; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)