Title:
【発明の名称】薄膜形成方法
Document Type and Number:
Japanese Patent JP2900284
Kind Code:
B2
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Inventors:
MORI HISATOSHI
KONYA NAOHIRO
KONYA NAOHIRO
Application Number:
JP23994090A
Publication Date:
June 02, 1999
Filing Date:
September 12, 1990
Export Citation:
Assignee:
KASHIO KEISANKI KK
International Classes:
H01L29/78; C23C16/50; H01L21/318; H01L21/336; H01L29/786; (IPC1-7): H01L21/336; H01L21/318
Domestic Patent References:
JP1189128A |
Other References:
【文献】「アモルファス半導体の基礎」オーム社(昭和58年5月10日)p.149