Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
【発明の名称】半導体レーザの製法
Document Type and Number:
Japanese Patent JP2949809
Kind Code:
B2
More Like This:
JPH10341061SEMICONDUCTOR OPTICAL AMPLIFICATION ELEMENT
JP3447859PRODUCTION OF SILICON BASED LIGHT EMITTING MATERIAL
JPH0372680SEMICONDUCTOR MATERIAL, PHOTOELECTRIC INTEGRATED CIRCUIT ELEMENT, AND CRYSTAL GROWTH METHOD OF MATERIAL
Inventors:
NARUI HIRONOBU
HIRATA SHOJI
Application Number:
JP22914690A
Publication Date:
September 20, 1999
Filing Date:
August 30, 1990
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SONII KK
International Classes:
H01S5/00; H01S5/16; (IPC1-7): H01S3/18
Domestic Patent References:
JP2174287A
JP2191388A
Attorney, Agent or Firm:
Hidekuma Matsukuma



 
Previous Patent: 浴用剤

Next Patent: プリンタの自動給紙装置