Title:
【発明の名称】シリコン層を備えた半導体デバイス
Document Type and Number:
Japanese Patent JP3016858
Kind Code:
B2
Abstract:
PCT No. PCT/DE91/00303 Sec. 371 Date Dec. 2, 1992 Sec. 102(e) Date Dec. 2, 1992 PCT Filed Apr. 8, 1991 PCT Pub. No. WO91/15798 PCT Pub. Date Oct. 17, 1991.In a semiconductor element is shown having a silicon layer, a waveguide comprising silicon and a diode structure connected with external, conductive contacts. The diode structure is provided in such an arrangement to the waveguide that the diode structure can be influenced by electron hole pairs generated by photons in the waveguide. In order to create a semiconductor element with an optical waveguide and an integrated diode structure, in which high losses in the optical waveguide are avoided, the waveguide is weakly doped, and a germanium-rich layer is a component of the diode structure. The semiconductor element is well suited as a component in integrated optics for optical-electrical conversion.
Inventors:
Schizpelt, Bernd
Shuplet, aluminum
Shiyu Mitsutohien, Joachim
Peter Man, Claus
Shuplet, aluminum
Shiyu Mitsutohien, Joachim
Peter Man, Claus
Application Number:
JP50644391A
Publication Date:
March 06, 2000
Filing Date:
April 08, 1991
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
G02B6/12; G02B6/42; G02F1/025; H01L31/10; H01L31/105; H01L31/108; G02F1/015; (IPC1-7): H01L31/10
Domestic Patent References:
| JP63122285A | ||||
| JP62128183A |
Other References:
ＩＥＥＥ ＥＬＥＣＴＲＯＮ ＤＥＶＩＣＥ ＬＥＴＴＥＲＳ，Ｖｏｌ．ＥＤＬ−７，Ｎｏ．５，Ｍａｙ １９８６，ｐ．３３０−３３２，Ｔ．Ｐ．Ｐｅａｒｓａｌｌ ｅｔ ａｌ．，”Ａｖａｌａｎｃｈｅ Ｇａｉｎ Ｇｅｘ Ｓｉ １−ｘ Ｉｎｆｒａｒｅｄ ｗａｖｅｓｕｉｄｅ Ｄｅｔｅｃｔｏｒｓ”
Attorney, Agent or Firm:
Iwao Yamaguchi