Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP3039967
Kind Code:
B2
Abstract:
A tunnel injection type semiconductor device having an MIS structure comprising a semiconductor region, a source (9), a drain (9) and a gate (4) electrode wherein, said source (9) and said drain (9) are composed of a metal or metal compound member, respectively, both of which having an overlapping portion with said gate electrode (4); a first conductivity type high impurity concentration semiconductor layer (5) is formed in said semiconductor region (1) in contact and contiguous to said metallic member (9) at the drain side; said source provides a Schottky barrier junction to said semiconductor region while said drain provides an ohmic contact to said semiconductor region; and a tunneling current flowing across a Schottky barrier junction between said source and said drain is controlled by a gate voltage.
Inventors:
Hideo Homma
Sumio Kawakami
Takahiro Nagano
Sumio Kawakami
Takahiro Nagano
Application Number:
JP20500590A
Publication Date:
May 08, 2000
Filing Date:
August 03, 1990
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L21/336; H01L29/47; H01L29/772; H01L29/78; H01L29/786; (IPC1-7): H01L29/78
Domestic Patent References:
| JP5752168A | ||||
| JP61206252A | ||||
| JP58116760A |
Attorney, Agent or Firm:
Yasuo Sakuta