Title:
【発明の名称】被膜作製方法
Document Type and Number:
Japanese Patent JP3062470
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form an I-type semiconductor coating containing silicon where oxygen and carbon are not more than specified density in measurement by means of SIMS, by guiding silicide vapor filled in a stainless cylinder into a reaction room and decompressing the reaction room through the use of a turbo molecule pump. SOLUTION: Reactive vapor is supplied from a doping system 50 of a system A. Namely, silane (Sin H2n+2 n>1, especially SiH4 or Si2 H6 ) and silicon fluoride (SiF2 or SiF4 ) which are purified and filled in the stainless cylinder are used as silicide vapor 24. The reaction system A is set to be 0.01-10Torr, 0.01-1Torr to be desirable, 0.08Torr, for example, and the degree of vacuum is realized by rotating the turbo molecule pump 87. Thus, the I-type semiconductor coating containing silicon where the density of oxygen and carbon is not more than 5×10<18> cm<-3> in measurement by SIMS(secondary ion measurement system) can be formed.
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Inventors:
Shunpei Yamazaki
Application Number:
JP5006198A
Publication Date:
July 10, 2000
Filing Date:
February 16, 1998
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C23C16/50; C23C16/54; H01L21/205; H01L31/04; (IPC1-7): H01L21/205; C23C16/50; C23C16/54; H01L31/04
Domestic Patent References:
| JP5628637A | ||||
| JP58209114A | ||||
| JP5744786A | ||||
| JP54153740A | ||||
| JP4329256Y1 |
Other References:
【文献】特許2923748(JP,B2)