Title:
【発明の名称】メタルコンタクト形成方法
Document Type and Number:
Japanese Patent JP3280403
Kind Code:
B2
Abstract:
A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
Inventors:
Fusen Yi Chen
Futai Tairu
Lee Shan Lin
Greek A. Dixist
Choi Cheer way
Futai Tairu
Lee Shan Lin
Greek A. Dixist
Choi Cheer way
Application Number:
JP28814891A
Publication Date:
May 13, 2002
Filing Date:
November 02, 1991
Export Citation:
Assignee:
STMicroelectronics,Inc.
International Classes:
C23C16/02; C23C16/20; H01L21/285; H01L21/28; H01L21/3205; H01L21/768; H01L23/485; H01L23/532; (IPC1-7): H01L21/28; H01L21/285; H01L21/768
Domestic Patent References:
| JP4225224A | ||||
| JP4188624A | ||||
| JP465831A | ||||
| JP2113530A | ||||
| JP291970A | ||||
| JP216735A | ||||
| JP192361A | ||||
| JP6474739A | ||||
| JP63162854A | ||||
| JP63103065A | ||||
| JP62136018A | ||||
| JP61241925A | ||||
| JP60244048A | ||||
| JP60193337A | ||||
| JP59112620A | ||||
| JP52146176A |
Attorney, Agent or Firm:
Masaaki Kobashi
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