【発明の名称】イオン注入装置及びイオン注入方法

Title:

【発明の名称】イオン注入装置及びイオン注入方法

Document Type and Number:

Japanese Patent JP3330759

Kind Code:

B2

Abstract:

PURPOSE: To prevent implantation operation of inaccurate implantation quantity by stopping ion implantation operation by an interlock, when the leak current surpasses a tolerance limit. CONSTITUTION: Current flowing in a beam collector 32 is detected without ion beam flow, namely, leak current with a stet-up mechanism 26 kept upright. This leak current is exchanged into voltage by a current/voltage converter 44 and an integrator 46 and this voltage is judged whether it is in a tolerance limit or not by a comparison part 54. As the result of the judgement, when leak current is too much, a negative logical signal from the comparison part 54 is input in a control part 56 so that the control part 56 received that stops the ion implantation operation.

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Inventors:

Takao Sugimoto

Application Number:

JP30276394A

Publication Date:

September 30, 2002

Filing Date:

November 11, 1994

Export Citation:

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