Title:
【発明の名称】カルコパイライト構造半導体薄膜とその製造方法、薄膜太陽電池の製造方法、および発光装置の製造方法
Document Type and Number:
Japanese Patent JP3337255
Kind Code:
B2
Abstract:
Methods to produce a I-III-VI2 chalcopyrite semiconductor film containing a Group VII element as a dopant are provided. The chalcopyrite film produced according to the process of the present invention has stoichiometric composition, and electrical characteristics such as p-n conduction type, carrier concentration and the like are controlled.
Inventors:
Takuyuki Negami
Mikihiko Nishitani
Shigemi Kobiki
Takahiro Wada
Mikihiko Nishitani
Shigemi Kobiki
Takahiro Wada
Application Number:
JP2528793A
Publication Date:
October 21, 2002
Filing Date:
February 15, 1993
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/363; H01L31/032; H01L31/04; H01L33/28; H01L33/30; H01L33/40; H01S5/00; (IPC1-7): H01L31/04; H01L21/363
Domestic Patent References:
| JP529361A | ||||
| JP4277682A | ||||
| JP513790A | ||||
| JP6232436A |
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)