Title:
【発明の名称】導波路の結合されたDFB式レーザーダイオードの製造法及びDFB式レーザーダイオード層構造
Document Type and Number:
Japanese Patent JP3347738
Kind Code:
B2
Abstract:
PCT No. PCT/DE96/00781 Sec. 371 Date Nov. 18, 1997 Sec. 102(e) Date Nov. 18, 1997 PCT Filed May 3, 1996 PCT Pub. No. WO96/37020 PCT Pub. Date Nov. 21, 1996Use of the method allows MRCW high-temperature laser diodes with a coupled optical waveguide to be produced in four epitaxial steps. The advantage is that, of the four epitaxial processes the first two and the last two are carried out virtually immediately successively after one another and an interruption is necessary only to produce a grating. Other components, such as photodiodes for example, can also be produced using the method.
Inventors:
Bernhard Steegmüller
Richard Mats
Richard Mats
Application Number:
JP53444296A
Publication Date:
November 20, 2002
Filing Date:
May 03, 1996
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
G02B6/122; H01L31/12; H01S5/00; H01S5/026; H01S5/12; G02B6/42; H01S5/227; H01S5/343; (IPC1-7): H01S5/12; G02B6/122; G02B6/42; H01S5/026
Domestic Patent References:
| JP6084892A | ||||
| JP6283803A | ||||
| JP6302901A | ||||
| JP2307287A | ||||
| JP5114765A |
Other References:
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，１９８９年，５４［２］，ｐ．１１４−１１６
Ｅｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ，１９９０年，２６［２］，ｐ．１４２−１４３
Ｅｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ，１９９２年，２８［２５］，ｐ．２３６１−２３６２
Ｅｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ，１９９３年，２９［１９］，ｐ．１６９１−１６９３
Ｅｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ，１９９０年，２６［２］，ｐ．１４２−１４３
Ｅｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ，１９９２年，２８［２５］，ｐ．２３６１−２３６２
Ｅｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ，１９９３年，２９［１９］，ｐ．１６９１−１６９３
Attorney, Agent or Firm:
Toshio Yano (2 outside)