Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
半導体記憶装置及びその製造方法
Document Type and Number:
Japanese Patent JP3566944
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor memory, in which integration can be enhanced while suppressing variation of cell characteristics caused by the production process. SOLUTION: A multilayer film is formed on a semiconductor substrate, being separated as an insular multilayer film, by depositing an insulation film and a first conductive film alternately. A second conductive film is formed through an interlayer capacitor film on the first conductive film side wall of the insular multilayer film and patterned to expose a part of the surface of the substrate and the first conductive film side wall. Subsequently, an insular semiconductor layer is grown epitaxially on the exposed first conductive film side wall through a tunnel insulation film and impurities are introduced to a region of the insular semiconductor layer facing the first conductive film thus producing a semiconductor memory having a memory cell comprising the semiconductor substrate, the insular semiconductor layer, a charge storage layer formed on the side wall of the insular semiconductor layer, and a control gate and is insulated electrically from the substrate.

More Like This:
JP4907174Resonance tunnel element, its manufacturing method, and storage element
JP2001127176SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
JP2520648[Title of the Invention] E Top 2 A method for manufacturing a structure including a PROM non-volatile memory cell and related transistors having a self-aligned silicon layer.
Inventors:
Tetsuro Endo
Fujio Masuoka
Takuji Tanigami
Takashi Yokoyama
Noboru Takeuchi
Application Number:
JP2001264928A
Publication Date:
September 15, 2004
Filing Date:
June 23, 2001
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
Fujio Masuoka
Sharp Corporation
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
JP10093083A
JP7235649A
JP6338602A
JP11224940A
JP8017949A
JP2002057231A
JP2002299478A
JP2003007866A
JP2003068885A
JP2003068886A
JP2003007873A
JP2003007868A
JP2003086714A
JP2003092366A
JP5036930A
JP7321228A
Attorney, Agent or Firm:
Shintaro Nogawa



 
Previous Patent: 車両用ドアハンドル

Next Patent: キャビテーション発生装置