Title:
半導体装置
Document Type and Number:
Japanese Patent JP3583562
Kind Code:
B2
Abstract:
According to the present invention, when a wiring layer using copper is formed, an interlayer insulation film is formed on a semiconductor substrate having a conductive portion of an element. A contact hole, which is connected to at least the conductive portion, is formed in the interlayer insulation film. A wiring groove is formed in the surface of the interlayer insulation film including a region where the contact hole is formed. A barrier metal having a tungsten carbide film on its surface is formed on the surface of the interlayer insulation film and in the wiring groove and contact hole in contact with the conductive portion. A copper film is then formed on the barrier metal in contact with the tungsten carbide film. After that, the contact hole and wiring groove are completely filled with the copper film by heat treatment. An excess portion is removed from the copper film except in the contact hole and wiring groove thereby to form a copper buried wiring layer. Thus, the copper film is formed in contact with the tungsten carbide film and the wettability of copper to the barrier metal is improved, accordingly, the copper wiring layer can be increased in reliability.
Inventors:
Mitsutoshi Koyama
Tsuyoshi Kubota
Toshio Shimizu
Tsuyoshi Kubota
Toshio Shimizu
Application Number:
JP27618296A
Publication Date:
November 04, 2004
Filing Date:
October 18, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/3205; H01L23/52; H01L21/28; H01L23/532; (IPC1-7): H01L21/3205; H01L21/28
Domestic Patent References:
| JP5102152A | ||||
| JP63301548A | ||||
| JP8288389A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai