Title:
強磁性トンネル接合素子の製造方法
Document Type and Number:
Japanese Patent JP3602013
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel junction element of low resistance value and high current density which is required for a magnetic head and magnetic memory by forming a tunnel barrier layer of high quality under good control. SOLUTION: A first ferromagnetic layer 11 and a conductive layer 12 are continuously formed in vacuum, pure oxygen is introduced without breaking the vacuum so that the surface of the conductive layer 12 is naturally oxidized to form a tunnel barrier layer 13, and after the oxygen is evacuated, a second ferromagnetic layer 14 is formed to complete a basic structure.
Inventors:
Hisanao Tsuge
Application Number:
JP27275299A
Publication Date:
December 15, 2004
Filing Date:
September 27, 1999
Export Citation:
Assignee:
NEC
International Classes:
G11B5/39; H01F10/30; H01F10/32; H01F41/20; H01L43/08; (IPC1-7): H01L43/08; G11B5/39; H01F10/30; H01F41/20
Domestic Patent References:
| JP9161232A | ||||
| JP684829A | ||||
| JP5102147A | ||||
| JP9143716A |
Other References:
Journal of Applied Physics,1996年4月15日,Vol.79,No.8,pp.4724-4729
Attorney, Agent or Firm:
Masahiko Desk
Yasuhisa Tanizawa
Kawai Nobuaki
Yasuhisa Tanizawa
Kawai Nobuaki