Title:
多層酸化物人工格子を持つ素子及びその製造方法
Document Type and Number:
Japanese Patent JP3620838
Kind Code:
B2
Abstract:
Disclosed are dielectric devices having a multi-layer oxide artificial lattice and a method for manufacturing the same. The method is adapted for a dielectric device having a substrate, a dielectric film coated on the substrate so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, a dielectric device having a substrate, a bottom electrode deposited on the substrate so as to be patterned thereon, a dielectric film coated on an upper portion of the lower electrode so as to be selectively patterned thereon, and a top electrode deposited and patterned on the dielectric film, or a dielectric device having a substrate, a bottom electrode deposited on the substrate and selectively patterned thereon, and a dielectric film coated on an upper portion of the bottom electrode so as to be selectively patterned thereon. The dielectric film is deposited at a single atomic layer thickness or at a unit lattice thickness. The dielectric film is formed by repeatedly depositing with layer-by-layer growth process at least two dielectric materials having dielectric constant different from each other at least one time in a range of the single atomic layer thickness to 20 nm or by depositing at least two dielectric materials in a predetermined alignment adapted for a functional device, thereby forming one artificial lattice having an identical directional feature. By utilizing the stress applied to an interfacial surface of the consisting layers in the artificial oxide lattice, the dielectric constant and tunability are greatly improved, so the artificial lattice can be adapted for high-speed switching and high-density semiconductor devices and high-frequency response telecommunication devices. In addition, the size of devices can be compacted and a low voltage drive can be achieved.
Inventors:
Jae Chan, Lee
Joe-Ho, Kim
Lee-Jun, Kim
Yeon-Soon, Kim
Joe-Ho, Kim
Lee-Jun, Kim
Yeon-Soon, Kim
Application Number:
JP2002137049A
Publication Date:
February 16, 2005
Filing Date:
May 13, 2002
Export Citation:
Assignee:
Sung Kyun Kwang University
International Classes:
H01L27/04; C23C14/08; C23C14/28; H01L21/02; H01L21/316; H01L21/822; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L29/51; H01L29/78; H01L21/314; (IPC1-7): H01L21/316; H01L21/822; H01L21/8242; H01L27/04; H01L27/105; H01L27/108; H01L29/78
Domestic Patent References:
| JP2001302400A | ||||
| JP5267570A | ||||
| JP10256085A | ||||
| JP2001313429A | ||||
| JP5263240A | ||||
| JP10173145A | ||||
| JP2002525426A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune