薄膜圧電抵抗センサ製作の方法

Title:

薄膜圧電抵抗センサ製作の方法

Document Type and Number:

Japanese Patent JP3730868

Kind Code:

B2

Abstract:

Semiconductor piezoresistive sensors are formed by a process using selective laser activation of a doped semiconductor surface. The substrate is a flexible membrane such as a diaphragm or bellows. A layer of insulative dielectric material is first applied to the substrate. A layer of highly resistive doped semiconductor material is then deposited on top of the dielectric layer. Through the use of an alignment device one or more piezoresistive sensors are formed by use of laser annealing of selected areas of the semiconductor material such that the annealed areas have a resistance suitable for use as sensors. Metal contacts are then applied over the end portions of sensors and form an electrical connection to the sensors. The non-annealed portions of doped semiconductor layer act as insulators between the formed piezoresistive sensors.

Inventors:

Robert Merchant
Majid Fazeri

Application Number:

JP2000611045A

Publication Date:

January 05, 2006

Filing Date:

April 13, 2000

Export Citation:

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