Title:
高純度Siの製造方法および装置
Document Type and Number:
Japanese Patent JP3735253
Kind Code:
B2
Abstract:
It is possible to produce high purity Si by heating solid SiO at a temperature of at least 1000 DEG C and lower than 1730 DEG C, for a disproportionation reaction in which the SiO solid is decomposed to liquid or solid Si and solid SiO2, and the produced Si is separated from the SiO2 and/or SiO. The SiO solid can be obtained by a process whereby a starting mixture of carbon C, silicon Si or ferrosilicon, or a combination thereof, with SiO2 is heated to generate SiO gas-containing gas, and the SiO-containing gas is cooled to produce SiO solid.
Inventors:
Jiro Kondo
Shimada Haruo
Shinji Tokumaru
Ryuji Watanabe
Atsushi Nogami
Akito Kiyose
Shimada Haruo
Shinji Tokumaru
Ryuji Watanabe
Atsushi Nogami
Akito Kiyose
Application Number:
JP2000526444A
Publication Date:
January 18, 2006
Filing Date:
December 25, 1998
Export Citation:
Assignee:
Nippon Steel Corporation
International Classes:
C01B33/037; B01J7/00; B01J12/02; B01J19/00; C01B33/021; C01B33/027; C01B33/039
Domestic Patent References:
| JP62123009A |
Other References:
Ber.Bunsenges.Phys.Chem.,1997年,Vol.101,No.11,p1647-1650
Attorney, Agent or Firm:
Takashi Ishida
Jun Tsuruta
Tetsuji Koga
Masaya Nishiyama
Jun Tsuruta
Tetsuji Koga
Masaya Nishiyama