Title:
バックサーフィスフィールドを有するソーラーセル及びその製造方法
Document Type and Number:
Japanese Patent JP3789474
Kind Code:
B2
Abstract:
For the simple production of a back surface field it is proposed that a boron-containing diffusion source layer (2) be applied to the rear (RS) of a silicon wafer (1) and boron be driven into the wafer to a depth of about 1 to 5 mu m at 900 to 1200 DEG C. This is done in an oxygen-containing atmosphere so that an oxide layer (4) is formed on open silicon surfaces, obviating the need to mask the regions not to be doped. After the removal of the oxide and source layer, phosphorus diffusion takes place and the back contact (3) is produced. It contains aluminum and, during the burn-in process, provides good ohmic contact.
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Inventors:
Reinhold Schlosser
Adolf Münzer
Adolf Münzer
Application Number:
JP52717196A
Publication Date:
June 21, 2006
Filing Date:
March 07, 1996
Export Citation:
Assignee:
Shell Solar GmbH
International Classes:
H01L31/04; H01L31/0288; H01L31/068; H01L31/18
Domestic Patent References:
| JP444277A | ||||
| JP5508742A | ||||
| JP5315628A | ||||
| JP553633A | ||||
| JP5464985A |
Other References:
J.Nijis et al., ”Towards 16% efficient polycrystalline silicon solar cells, using a relatively simple technology”,11th EC PHOTOVOLTAIC SOLAR TECHNOLOGY, 12-16 October 1992, p.164-167
Attorney, Agent or Firm:
Toshio Yano
Toshiomi Yamazaki
Takuya Kuno
Reinhard Einsel
Toshiomi Yamazaki
Takuya Kuno
Reinhard Einsel