Title:
半導体基板の光学ビームを位相変移するための方法と装置
Document Type and Number:
Japanese Patent JP3923471
Kind Code:
B2
Abstract:
A semiconductor-based gain optical phase-shifting device, method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a semiconductor substrate through which an optical beam is to be directed along an optical path through the semiconductor substrate. A plurality of floating charge modulated regions are disposed along the optical path. A phase of the optical beam is responsive to a charge concentration in each of the plurality of floating charge modulated regions. A plurality of tunneling insulation layers are disposed between each of the plurality of floating charge modulated regions and the semiconductor substrate. A plurality of control nodes are disposed proximate to the plurality of floating charge modulated regions. Each of the control nodes control the charge concentration in a respective one of the plurality of floating charge modulated regions. A plurality of blocking insulation layers disposed between each of the plurality of control nodes and the plurality of floating charge modulated regions.
Inventors:
Samara-Rubio Dean
Application Number:
JP2003546163A
Publication Date:
May 30, 2007
Filing Date:
November 08, 2002
Export Citation:
Assignee:
INTEL CORPORATION
International Classes:
G02F1/025; G02F1/313
Domestic Patent References:
| JP2001526797A | ||||
| JP3196120A | ||||
| JP9503869A |
Foreign References:
| WO2000058776A1 |
Other References:
Jumana Boussey et al.,OPTOELECTRONIC INTEGRATION IN SILICON-ON-INSULATOR TECHNOLOGIES,SEMICONDUCTOR CONFERENCE,1998年10月 6日,p.407-415
Attorney, Agent or Firm:
Akihiro Ryuka