Title:
半導体装置
Document Type and Number:
Japanese Patent JP4054321
Kind Code:
B2
Abstract:
A semiconductor device includes: a p-type MIS transistor having a first gate electrode including silicon doped with p-type impurities; an n-type MIS transistor having a second gate electrode including silicon doped with n-type impurities; and a shared line which connects the p-type MIS transistor and the n-type MIS transistor and serves as a path of a power supply current or a ground current, the shared line including silicided silicon. The first gate electrode and the second gate electrode have silicided top portions, respectively, to establish electrical connection therebetween and the shared line has a line width larger than the line widths of the first gate electrode and the second gate electrode.
Inventors:
Tokuhiko Tamaki
Application Number:
JP2004184806A
Publication Date:
February 27, 2008
Filing Date:
June 23, 2004
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L21/8238; H01L21/3205; H01L23/52; H01L27/092; H01L29/76; H01L27/11
Domestic Patent References:
| JP55068675A | ||||
| JP2001077210A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura