Title:
磁性薄膜メモリ
Document Type and Number:
Japanese Patent JP4054403
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetic thin film memory in which the making of high integration of bit cells is made possible by eliminating the anti-magnetic field of magnetic thin films becoming a problem at the time of micronizing a bit cell. SOLUTION: In a magneto-resistance element which has a first magnetic layer 1 which is magnetizedly oriented in one direction of the inside of a film surface and has a low coersive force, a second magnetic layer 2 which is magnetizedly oriented parallelly or anti-parallelly with the magnetized orientation of the first magnetic layer 1 and has a high coercive force and the non- magnetic layer 4 provided in between the first and second magnetic layers 1, 2 on a substrate and in which an electric resistance is changed by magnetic directions of the two magnetic layers, moreover, a third magnetic layer 3 is provided by being made to be in contact with the first and second magnetic layers 1, 2 to constitute a closed magnetic path surrounding the non-magnetic layer 4 by the magnetic layers 1, 2 and 3 when an external magnetic field is zero.
Inventors:
Naoki Nishimura
Application Number:
JP11104097A
Publication Date:
February 27, 2008
Filing Date:
April 28, 1997
Export Citation:
Assignee:
Canon Inc
International Classes:
G11C11/15; H01L43/08; H01L21/8246; H01L27/105
Domestic Patent References:
| JP6215335A | ||||
| JP8504533A | ||||
| JP1136947A |
Other References:
太田恵造,磁気工学の基礎I-磁気の物理-,共立出版株式会社,1973年 6月 1日,初版,p.42
榊間博、入江庸介、川分康博,GMRを用いた固体メモリー,日本応用磁気学会誌,日本応用磁気学会,1996年 2月 1日,Vol.20、No.1,p.22-26
林和彦訳,磁気ヘッド-基礎と応用,丸善株式会社,1996年 8月31日,初版,p.97-98
榊間博、入江庸介、川分康博,GMRを用いた固体メモリー,日本応用磁気学会誌,日本応用磁気学会,1996年 2月 1日,Vol.20、No.1,p.22-26
林和彦訳,磁気ヘッド-基礎と応用,丸善株式会社,1996年 8月31日,初版,p.97-98
Attorney, Agent or Firm:
Akio Miyazaki
Masaaki Ogata
Nobuyuki Kaneda
Katsuhiro Ito
Ishibashi Masayuki
Masaaki Ogata
Nobuyuki Kaneda
Katsuhiro Ito
Ishibashi Masayuki